Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

Details Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

1995-02-23

arxiv.org/abs/cond-mat/9502099v1

Physics

Condensed Matter

16 pages, LaTex (RevTex), 8 figs

Scientific paper

10.1063/1.360323

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.

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