Universality and the zero-bias conductance of the single-electron transistor

Details Universality and the zero-bias conductance of the single-electron transistor Universality and the zero-bias conductance of the single-electron transistor

2009-06-22

arxiv.org/abs/0906.4063v1

Phys. Rev. B 80 (2009) 235317 p.1-22

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 paged, 6 figures; submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.80.235317

The thermal dependence of the electrical conductance of the single-electron transistor (SET) in the zero-bias Kondo regime is discussed. An exact mapping to the universal curve for the symmetric Anderson model is established. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. Illustrative numerical renormalization-group results, in excellent agreement with the mapping, are presented.

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