Theory of the spin relaxation of conduction electrons in silicon

Details Theory of the spin relaxation of conduction electrons in silicon Theory of the spin relaxation of conduction electrons in silicon

2009-06-22

arxiv.org/abs/0906.4054v4

Phys. Rev. Lett. 104, 016601 (2010)

Physics

Condensed Matter

Materials Science

4+ pages, 4 figures, to be published in PRL

Scientific paper

10.1103/PhysRevLett.104.016601

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

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