Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach

Details Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach

2007-04-02

arxiv.org/abs/0704.0148v5

Phys. Rev. B 77, 035323 (2008)

Physics

Condensed Matter

Materials Science

20 pages, 13 figures, to be published in PRB

Scientific paper

10.1103/PhysRevB.77.035323

The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as the hyperfine interaction with the surrounding nuclei, the Dresselhaus spin-orbit coupling together with the electron--bulk-phonon interaction, the $g$-factor fluctuations, the direct spin-phonon coupling due to the phonon-induced strain, and the coaction of the electron--bulk/surface-phonon interaction together with the hyperfine interaction are included. The relative contributions from these spin decoherence mechanisms are compared in detail. In our calculation, the spin-orbit coupling is included in each mechanism and is shown to have marked effect in most cases. The equation-of-motion approach is applied in studying both the spin relaxation time $T_1$ and the spin dephasing time $T_2$, either in Markovian or in non-Markovian limit. When many levels are involved at finite temperature, we demonstrate how to obtain the spin relaxation time from the Fermi Golden rule in the limit of weak spin-orbit coupling. However, at high temperature and/or for large spin-orbit coupling, one has to use the equation-of-motion approach when many levels are involved. Moreover, spin dephasing can be much more efficient than spin relaxation at high temperature, though the two only differs by a factor of two at low temperature.

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