Temperature dependent resistivity in bilayer graphene due to flexural phonons

Details Temperature dependent resistivity in bilayer graphene due to flexural phonons Temperature dependent resistivity in bilayer graphene due to flexural phonons

2011-02-03

arxiv.org/abs/1102.0807v1

Phys.Rev.B83:235416,2011

Physics

Condensed Matter

Materials Science

20 pages, 4 figures

Scientific paper

10.1103/PhysRevB.83.235416

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic structure combine with different electron-phonon coupling to give the same parametric dependence in resistivity, and in particular the same temperature $T$ behavior. In parallel with the single layer, flexural phonons dominate the phonon contribution to resistivity in the absence of strain, where a density independent mobility is obtained. This contribution is strongly suppressed by tension, and in-plane phonons become the dominant contribution in strained samples. Among the quantitative differences an important one has been identified: room $T$ mobility in bilayer graphene is substantially higher than in monolayer. The origin of quantitative differences has been unveiled.

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