On giant piezoresistance effects in silicon nanowires and microwires

Details On giant piezoresistance effects in silicon nanowires and microwires On giant piezoresistance effects in silicon nanowires and microwires

Publishing date

2010-10-08

URL

arxiv.org/abs/1010.1633v1

Journals

Physical Review Letters 105, 226802 (2010)

Science

Physics

Field

Condensed Matter

SubField

Mesoscale and Nanoscale Physics

Type

Scientific paper

Digital Object Identifier

10.1103/PhysRevLett.105.226802

Abstract

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

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