Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling

Details Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling

1998-11-19

arxiv.org/abs/cond-mat/9811285v1

Condensed Matter Physics, vol. 2, No. 3(19), p. 447-452 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

6 pages, 3 eps figures, Latex 2.09, accepted for publication in Cond. Matt. Phys., presented at INTAS-Ukraine Workshop on Cond

Scientific paper

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is devoted to a further study of metal-insulator transition in this model,in particular, an investigation of temperature-induced metal-to-insulator transition. The dependence of energy gap on concentration of doubly occupancy leads to increasing energy gap width with increase of temperature. Thus narrow-band system can undergo transition from a metallic state to an insulating state with the increase of temperature. For some values of intra-atomic Coulomb repulsion $U$ and $w_0$ ($w_0$ is half-bandwidth) we find the values of temperature when narrow-band material undergoes transition from a metallic state to an insulating state. We show that at given $U/w_0$ metal-insulator transition in model with non-equivalent Hubbard sub-bands can occur at smaller temperature than in the Hubbard model. It testifies on the fact that taking into account of correlated hopping is important for a consideration of metal-insulator transition problem.

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