Fabrication of single nickel-nitrogen defects in diamond by chemical vapor deposition

Details Fabrication of single nickel-nitrogen defects in diamond by chemical vapor deposition Fabrication of single nickel-nitrogen defects in diamond by chemical vapor deposition

2004-11-10

arxiv.org/abs/cond-mat/0411245v1

Applied Physics Letters 86, 131926 (2005)

Physics

Condensed Matter

Materials Science

15 pages, 4 figures

Scientific paper

10.1063/1.1896088

Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a linewidth of 1.5 nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury-Brown and Twiss interferometer. Confocal images revealed approximately 10^6 optically active sites/cm^2 in the synthesized films. The fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptography. It can also be used as an ideal point-like source for near-field optical microscopy.

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