Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

Details Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

2008-12-28

arxiv.org/abs/0812.4828v2

Appl. Phys. Lett. 94, 113104 (2009)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1063/1.3100197

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to ~ 2X10^4. The measured field effect mobilities are as high as 123 cm2/Vs, which is three orders of magnitude higher than typical solution processed organic FET devices.

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