Response to "Response to the Comment on 'Performance of a Spin Based Insulated Gate Field Effect Transistor' "

Details Response to "Response to the Comment on 'Performance of a Spin Based Insulated Gate Field Effect Transistor' " Response to "Response to the Comment on 'Performance of a Spin Based Insulated Gate Field Effect Transistor' "

2006-07-26

arxiv.org/abs/cond-mat/0607659v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

This is a response to cond-mat/0607432. We had submitted a Comment on the original paper by Hall and Flatte to Applied Physics

Scientific paper

We show that the arguments in the posting cond-mat/0607432 by Flatte and Hall
are flawed and untenable. Their spin based transistor cannot work as claimed
because of fundamental scientific barriers, which cannot be overcome now, or
ever. Their device is not likely to work as a transistor at room temperature,
let alone outperform the traditional MOSFET, as claimed.

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