Excitonic Instability and Origin of the Mid-Gap States

Details Excitonic Instability and Origin of the Mid-Gap States Excitonic Instability and Origin of the Mid-Gap States

1994-05-11

arxiv.org/abs/cond-mat/9405032v1

Physics

Condensed Matter

2 pages with 2 figures available upon request, LaTex Version 3.0 (PCTeX), to appear in the Proceedings of the M2S-HTSC IV Conf

Scientific paper

10.1016/0921-4534(94)92384-1

In the framework of the two-band model of a doped semiconductor the self-consistent equations describing the transition into the excitonic insulator state are obtained for the 2D case. It is found that due to the exciton-electron interactions the excitonic phase may arise with doping in a semiconductor stable initially with respect to excitonic transition in the absence of doping. The effects of the strong interactions between electron (hole) Fermi-liquid (FL) and excitonic subsystems can lead to the appearance of the states lying in the middle of the insulating gap.

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