Quantum Hall effect in dual-gated graphene bilayers with tunable layer density imbalance

Details Quantum Hall effect in dual-gated graphene bilayers with tunable layer density imbalance Quantum Hall effect in dual-gated graphene bilayers with tunable layer density imbalance

2009-09-12

arxiv.org/abs/0909.2288v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state (QHS) at filling factor $\nu=0$ evinced by a plateau in the Hall conductivity, consistent with the opening of a gap between the electron and hole bands. By varying the layer density imbalance at fixed total density, we observe a suppression of the QHS at filling factors $\nu=8$ and $\nu=12$ when the layer densities are balanced, an observation at variance with theoretical expectations in the absence of electron-electron interaction and disorder.

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