High-performance planar light-emitting diode

Details High-performance planar light-emitting diode High-performance planar light-emitting diode

2002-07-31

arxiv.org/abs/cond-mat/0207735v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1063/1.1540244

Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.

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