Metallic charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling

Details Metallic charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling Metallic charge density waves and surface Mott insulators for adlayer structures on semiconductors: extended Hubbard modeling

1998-02-02

arxiv.org/abs/cond-mat/9802014v1

Physics

Condensed Matter

Strongly Correlated Electrons

10 pages, 3 figures, presented at ECOSS-17 sept 1997

Scientific paper

10.1016/S0039-6028(97)01088-1

Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of electron-electron interactions, and also of electron-phonon coupling, on the narrow surface state band originating from the dangling bond orbitals of the adsorbate. We model the problem by an extended two-dimensional Hubbard model at half-filling on a triangular lattice. We include an on-site Hubbard repulsion U and a nearest-neighbor V, plus a long-ranged Coulomb tail. The electron-phonon interaction is treated in the deformation potential approximation. We have explored the phase diagram of the model including the possibility of commensurate 3x3 phases, using mainly the Hartree-Fock approximation. For U larger than the bandwidth we find magnetic insulators, possibly corresponding to the situation in SiC and in K/Si. For smaller U, the inter-site repulsion V can stabilize metallic CDW phases, reminiscent of the 3x3 structures of Sn/Ge, and possibly of Pb/Ge.

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