Molecular hydrogen in silicon: A path-integral simulation

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

9 pages, 6 figures

Scientific paper

Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic interactions were modeled by a tight-binding potential fitted to density-functional calculations. The most stable position for these impurities is found at the interstitial T site, with the hydrogen molecule rotating freely in the Si cage. Vibrational frequencies have been obtained from a linear-response approach, based on correlations of atom displacements at finite temperatures. The results show a large anharmonic effect in the stretching vibration, omega_s, which is softened with respect to a harmonic approximation by about 300 cm^{-1}. The coupling between rotation and vibration causes an important decrease in omega_s for rising temperature.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Molecular hydrogen in silicon: A path-integral simulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Molecular hydrogen in silicon: A path-integral simulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Molecular hydrogen in silicon: A path-integral simulation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-468951

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.