Thomas-Fermi approach to resonant tunneling in delta-doped diodes

Details Thomas-Fermi approach to resonant tunneling in delta-doped diodes Thomas-Fermi approach to resonant tunneling in delta-doped diodes

1994-11-02

arxiv.org/abs/cond-mat/9411011v1

Physics

Condensed Matter

6 pages, REVTeX 3.0, 5 figures available from diez@dulcinea.uc3m.es

Scientific paper

10.1063/1.359404

We study resonant tunneling in B-$\delta$-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diodes.

Affiliated with

Also associated with

No associations

Rating

Thomas-Fermi approach to resonant tunneling in delta-doped diodes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Thomas-Fermi approach to resonant tunneling in delta-doped diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thomas-Fermi approach to resonant tunneling in delta-doped diodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-461534