Transport and percolation in a low-density high-mobility two-dimensional hole system

Details Transport and percolation in a low-density high-mobility two-dimensional hole system Transport and percolation in a low-density high-mobility two-dimensional hole system

2007-10-18

arxiv.org/abs/0710.3542v1

Phys. Rev. Lett. 99 236402 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

accepted for publication in PRL

Scientific paper

10.1103/PhysRevLett.99.236402

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm$^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of $T$= 50 mK, the conductivity vs. density data indicates an inhomogeneity driven percolation-type transition to an insulating state at a critical density of $3.8\times 10^9$ cm$^{-2}$.

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