Detection of spin voltaic effect in a p-n heterojunction

Details Detection of spin voltaic effect in a p-n heterojunction Detection of spin voltaic effect in a p-n heterojunction

2005-09-29

arxiv.org/abs/cond-mat/0509756v2

Physics

Condensed Matter

Materials Science

16 pages, 3figures

Scientific paper

10.1143/JJAP.45.L663

Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-AlGaAs/p-InGaAs/p-GaAs heterostructure are reported. It is found that, under the appropriate forward bias condition, spin voltaic effect (SVE) can survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than the signals due to the magnetic circular dichroism. Our analysis suggests that SVE can be enhanced by optimization of layer thickness, doping profile, and applied bias, making SVE favorable for the realization of a semiconductor-based polarization detector, a spin-photodiode (spin-PD).

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