Spin Torque in Anisotropic Tunneling Junctions

Details Spin Torque in Anisotropic Tunneling Junctions Spin Torque in Anisotropic Tunneling Junctions

2011-10-16

arxiv.org/abs/1110.3488v1

Physical Review B 83, 172403 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, in-plane and perpendicular to the plane of rotation, that can induce either current-driven {\em magnetization switching} from in-plane to out-of-plane configuration or {\em magnetization precessions}, similarly to Spin Transfer Torque in spin-valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

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