Pit nucleation in the presence of 3D islands during heteroepitaxial growth

Details Pit nucleation in the presence of 3D islands during heteroepitaxial growth Pit nucleation in the presence of 3D islands during heteroepitaxial growth

2004-02-12

arxiv.org/abs/cond-mat/0402342v3

Physical Review B 70, 235312 (2004)

Physics

Condensed Matter

Materials Science

33 pages, 8 figures. Changes: clarified some captions, added a summary of the assumptions made in this work

Scientific paper

10.1103/PhysRevB.70.235312

We present a model in which pit nucleation in thin films is considered to arise from a near-equilibrium nucleation process. In this model the adatom concentration plays a central role in controlling the morphological development of the surface. Although pits relieve elastic energy more efficiently than islands, pit nucleation can be prevented by a high adatom concentration. Three-dimensional islands act as adatom sinks and the lower adatom density in their vicinity promotes pit nucleation. Thermodynamic considerations predict several different growth regimes in which pits may nucleate at different stages of growth depending on the growth conditions and materials system. However direct comparisons to experimental observations require that kinetics be taken into account as well. The model predicts a wide range of possible morphologies: planar films, islands alone, islands nucleation followed by pit nucleation, and pits alone. The model shows good agreement with experimental observations in III-V systems given the uncertainties in quantifying experimental parameters such as the surface energy.

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