Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness

Details Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness

2006-12-05

arxiv.org/abs/cond-mat/0612130v3

Phys.Rev.Lett.99:046404,2007

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 2 figures: Correct version to appear in PRL. Revisions include a derivation of the electron operator at low energies

Scientific paper

10.1103/PhysRevLett.99.046404

We construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi_2Sr_2CaCu_2O_{8+\delta} (Pb2212).

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