Mapping of spin lifetimes to electronic states in n-type GaAs near the metal-insulator transition

Details Mapping of spin lifetimes to electronic states in n-type GaAs near the metal-insulator transition Mapping of spin lifetimes to electronic states in n-type GaAs near the metal-insulator transition

2007-06-13

arxiv.org/abs/0706.1884v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

The longest spin lifetimes in bulk n-GaAs exceed 100 ns for doping concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been identified. We therefore investigate the energy dependence of spin lifetimes in n-GaAs by time-resolved Kerr rotation. Spin lifetimes vary by three orders of magnitude as a function of energy when occupying donor and conduction band states. The longest spin lifetimes (>100 ns) are assigned to delocalized donor band states, while conduction band states exhibit shorter spin lifetimes. The occupation of localized donor band states is identified by short spin lifetimes (~300 ps) and a distinct Overhauser shift due to dynamic nuclear polarization.

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