Simulation of ion track ranges in uranium oxide

Details Simulation of ion track ranges in uranium oxide Simulation of ion track ranges in uranium oxide

2010-04-04

arxiv.org/abs/1004.0490v1

Nuclear Instruments and Methods in Physics Research B Vol.268, 2688 (2010)

Physics

Condensed Matter

Materials Science

Eleven pages, four figures.

Scientific paper

10.1016/j.nimb.2010.06.004

Direct comparisons between statistically sound simulations of ion-tracks and published experimental measurements of range densities of iodine implants in uranium dioxide have been made with implant energies in the range of 100-800 keV. Our simulations are conducted with REED-MD (Rare Event Enhanced Domain-following Molecular Dynamics) in order to account for the materials structure in both single crystalline and polycrystalline experimental samples. We find near-perfect agreement between REED-MD results and experiments for polycrystalline target materials.

Affiliated with

Also associated with

No associations

Rating

Simulation of ion track ranges in uranium oxide does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Simulation of ion track ranges in uranium oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simulation of ion track ranges in uranium oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-448812