Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

Details Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

2005-12-08

arxiv.org/abs/cond-mat/0512172v3

Appl. Phys. Lett. 97, 14, 142108 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, 2 figures

Scientific paper

10.1063/1.3499360

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.

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