Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Details Micrometer-scale ballistic transport in encapsulated graphene at room temperature Micrometer-scale ballistic transport in encapsulated graphene at room temperature

2011-03-23

arxiv.org/abs/1103.4510v3

Nano Lett. 11, 2396-2399 (2011)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/nl200758b

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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