Coherent defect-assisted multiphonon intraband carrier relaxation in semiconductor quantum dots

Details Coherent defect-assisted multiphonon intraband carrier relaxation in semiconductor quantum dots Coherent defect-assisted multiphonon intraband carrier relaxation in semiconductor quantum dots

2007-05-18

arxiv.org/abs/0705.2727v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 3 figures, submitted to Phys.Rev. B

Scientific paper

10.1103/PhysRevB.77.075315

new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this mechanism is capable of explaining the observed trends in temperature dependences of the intraband relaxation rates for PbSe and CdSe colloidal nanocrystal quantum dots.

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