Phonon Knudsen flow in nanostructured semiconductor systems

Details Phonon Knudsen flow in nanostructured semiconductor systems Phonon Knudsen flow in nanostructured semiconductor systems

2005-03-30

arxiv.org/abs/cond-mat/0503701v1

J. Appl. Phys. 99, 054303 (2006)

Physics

Condensed Matter

Materials Science

29 pages, 9 figures. (Submitted to Journal of Applied Physics)

Scientific paper

10.1063/1.2175474

We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow effect. For both types of nanostructured systems we find that the phonon transport is reduced significantly below the bulk value by boundary scattering off interface defects and/or interface modes. The Knudsen flow effects are important for almost all types of semiconductor nanostructures but we find them most pronounced in Si and SiC systems due to the very large phonon mean-free paths. We apply and test our wire thermal-transport results to recent measurements on Si nanowires. We further investigate and predict size effects in typical multilayered SiC nanostructures, for example, a doped-SiC/SiC/SiO$_2$ layered structure that could define the transport channel in a nanosize transistor. Here the phonon-interface scattering produces a heterostructure thermal conductivity smaller than what is predicted in a traditional heat-transport calculation, suggesting a breakdown of the traditional Fourier analysis even at room temperatures. Finally, we show that the effective thermal transport in a SiC/SiO$_2$ heterostructure is sensitive to the oxide depth and could thus be used as an in-situ probe of the SiC oxidation progress.

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