The Pairing Mechanism in HTSC investigated by Electronic Raman Scattering

Details The Pairing Mechanism in HTSC investigated by Electronic Raman Scattering The Pairing Mechanism in HTSC investigated by Electronic Raman Scattering

1994-10-18

arxiv.org/abs/cond-mat/9410065v1

Physics

Condensed Matter

3 pages, LaTeX, 2 ps figures available on request to ahoff@phys2.rwth-aachen.de

Scientific paper

10.1007/BF00752288

By means of electronic Raman scattering we investigated the symmetry of the energy gap Delta(k), its temperature dependence and its variation with doping of well characterized Bi2Sr2CaCu2O8+delta single crystals. The oxygen content delta was varied between the under- and the overdoped regime by subsequently annealing the same single crystal in Ar and O2, respectively. The symmetry analysis of the polarized electronic Raman scattering is consistent with a d_x^2-y^2-wave symmetry of the energy gap in both regimes. The gap ratio 2Delta_max/k_BT_c and its temperature dependence changes with doping similar to predictions of theories based on paramagnon coupling.

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