Excitonic Photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

Details Excitonic Photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films Excitonic Photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

2002-04-13

arxiv.org/abs/cond-mat/0204296v1

Physics

Condensed Matter

Materials Science

20 pages, 7 figures Submitted to Journal of Luminescence

Scientific paper

10.1016/S0022-2313(02)00346-0

The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as a function of their size. The measurements show that the PL of the GaSb and Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very closely. By using deconvolution of PL spectra, origins of structures in photoluminescence were identified.

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