Switching behavior of semiconducting carbon nanotubes under an external electric field

Details Switching behavior of semiconducting carbon nanotubes under an external electric field Switching behavior of semiconducting carbon nanotubes under an external electric field

2001-06-22

arxiv.org/abs/cond-mat/0106478v1

Applied Physics Letters, 78 (2001) 2521

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, ReVTeX

Scientific paper

10.1063/1.1367295

We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced-gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50\AA would have adequate switching characteristics.

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