Ballisticity of nanotube FETs: Role of phonon energy and gate bias

Details Ballisticity of nanotube FETs: Role of phonon energy and gate bias Ballisticity of nanotube FETs: Role of phonon energy and gate bias

2005-11-30

arxiv.org/abs/cond-mat/0511723v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 1 table, 4 figures

Scientific paper

10.1063/1.2218322

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.

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