A phantom force induced by the tunneling current, characterized on Si(111)

Details A phantom force induced by the tunneling current, characterized on Si(111) A phantom force induced by the tunneling current, characterized on Si(111)

2011-03-11

arxiv.org/abs/1103.2226v1

Phys. Rev. Lett. 106, 226801 (2011)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, submitted

Scientific paper

10.1103/PhysRevLett.106.226801

Simultaneous measurements of tunneling currents and atomic forces on surfaces and adsorbates provide new insights into the electronic and structural properties of matter on the atomic scale. We report on experimental observations and calculations of a strong impact the tunneling current can have on the measured force, which arises when the resistivity of the sample cannot be neglected. We present a study on Si(111)-7\times7 with various doping levels, but this effect is expected to occur on other low-conductance samples like adsorbed molecules, and is likely to strongly affect Kelvin probe measurements on the atomic scale.

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