Topological Insulator Cell for Memory and Magnetic Sensor Applications

Details Topological Insulator Cell for Memory and Magnetic Sensor Applications Topological Insulator Cell for Memory and Magnetic Sensor Applications

2011-06-13

arxiv.org/abs/1106.2403v2

Appl. Phys. Express 4, 094201 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures. Updated figures and text

Scientific paper

10.1143/APEX.4.094201

We propose a memory device based on magnetically doped surfaces of 3D
topological insulators. Magnetic information stored on the surface is read out
via the quantized Hall effect, which is characterized by a topological
invariant. Consequently, the read out process is insensitive to disorder,
variations in device geometry, and imperfections in the writing process.

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