Trapping-detrapping fluctuations in organic space-charge layers

Details Trapping-detrapping fluctuations in organic space-charge layers Trapping-detrapping fluctuations in organic space-charge layers

2010-08-14

arxiv.org/abs/1008.2445v1

Appl. Phys. Lett. vol. 95, 233303 (2009)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3271769

A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.

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