Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects

Details Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects

2009-10-23

arxiv.org/abs/0910.4466v2

PRB v81, p041413 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Updated Version

Scientific paper

10.1103/PhysRevB.81.041413

We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a strong distance dependence within 4 nm of the defect with the strongest energetic fluctuations equaling up to 100 meV. These localized perturbations show large spatially-dependent asymmetries in the LDOS around the defect site for each corresponding quantum well state. These energetic fluctuations can be described by a simple model which accounts for fluctuations in the confinement potential induced by topographic changes.

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