The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels

Details The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels

2006-09-06

arxiv.org/abs/cond-mat/0609141v2

Physics

Condensed Matter

Materials Science

7 pages

Scientific paper

The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n junctions. They are usually employed for the calculation of the p-n junction current/ voltage characteristic. This work demonstrates that they are valid only at low injection current levels. New analytical expressions for these boundary conditions are obtained for medium and high injection levels. These expressions are verified by calculating the current/ voltage characteristics of p-n junctions operated at high current levels.

Affiliated with

Also associated with

No associations

Rating

The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-418269