Control of spin relaxation in semiconductor double quantum dots

Details Control of spin relaxation in semiconductor double quantum dots Control of spin relaxation in semiconductor double quantum dots

2006-01-02

arxiv.org/abs/cond-mat/0601028v5

Phys. Rev. B 74, 165312 (2006).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, to be published in PRB

Scientific paper

10.1103/PhysRevB.74.165312

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.

Affiliated with

Also associated with

No associations

Rating

Control of spin relaxation in semiconductor double quantum dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Control of spin relaxation in semiconductor double quantum dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of spin relaxation in semiconductor double quantum dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-41728