Shot Noise in Graphene

Details Shot Noise in Graphene Shot Noise in Graphene

2007-11-20

arxiv.org/abs/0711.3206v3

Phys. Rev. Lett. 100, 156801 (2008).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

related papers available at http://marcuslab.harvard.edu

Scientific paper

10.1103/PhysRevLett.100.156801

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.

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