Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices

Details Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices

2005-02-14

arxiv.org/abs/cond-mat/0502321v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.71.201303

The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent superlattice components. It is shown that the mechanism originally introduced to describe the spin correlations in antiferromagnetic EuTe/PbTe superlattices, explains the experimental results observed in ferromagnetic semiconductor structures, i.e., both the antiferromagnetic coupling between ferromagnetic layers in IV-VI (EuS/PbS and EuS/YbSe) superlattices as well as the ferromagnetic interlayer coupling in III-V ((Ga,Mn)As/GaAs) multilayer structures. The model allows also to predict (Ga,Mn)As-based structures, in which an antiferromagnetic interlayer coupling could be expected.

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