Spin transference and magnetoresistance amplification in a transistor

Details Spin transference and magnetoresistance amplification in a transistor Spin transference and magnetoresistance amplification in a transistor

2005-07-15

arxiv.org/abs/cond-mat/0507378v2

Phys. Rev. B 73, 161307(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, revised version, changed title, new figures

Scientific paper

10.1103/PhysRevB.73.161307

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

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