Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene

Details Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene

2012-04-18

arxiv.org/abs/1204.3971v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 10pages

Scientific paper

Bilayer silicene has richer physical properties than bilayer graphene due to its buckled structure together with its trigonal symmetric structure. The buckled structure arises from a large ionic radius of silicon, and the trigonal symmetry from a particular way of hopping between two silicenes. It is a topologically trivial insulator since it carries a trivial $\mathbb{Z}_{2}$ topological charge. Nevertheless, its physical properties are more akin to those of a topological insulator than those of a band insulator. Indeed, a bilayer silicene nanoribbon has edge modes which are almost gapless and helical. We may call it a quasi-topological insulator. An important observation is that the band structure is controllable by applying the electric field to a bilayer silicene sheet. We investigate the energy spectrum of bilayer silicene under electric field. Just as monolayer silicene undergoes a phase transition from a topological insulator to a band insulator at a certain electric field, bilayer silicene makes a transition from a quasi-topological insulator to a band insulator beyond a certain critical field. Bilayer silicene is a metal while monolayer silicene is a semimetal at the critical field. Furthermore we find that there are several critical electric fields where the gap closes due to the trigonal warping effect in bilayer silicene.

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