Physics – Condensed Matter – Materials Science
Scientific paper
2010-02-18
Physics
Condensed Matter
Materials Science
Scientific paper
In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation. Basically, starting from an initial state where a given number of traps are occupied, the dynamics of the relaxation process is measured calculating the density of occupied traps and its fluctuations (second moment) as function of time. Our theoretical results show a universal logarithmic law for the density of occupied traps $\bar{
Silva Roberto da
Wirth Gilson I.
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