Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction

Details Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction

2005-07-11

arxiv.org/abs/cond-mat/0507232v1

Appl. Phys. Lett. 87, 031903 (2005)

Physics

Condensed Matter

Materials Science

Accepted for publication in Appl. Phys. Lett. Numbers of pages and figures are 12 and 4, respectively

Scientific paper

10.1063/1.1995946

We demonstrate that annealing of a vicinal Si(111) surface at about 800 C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2,0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

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