Temperature dependent electronic correlation effects in GdN

Details Temperature dependent electronic correlation effects in GdN Temperature dependent electronic correlation effects in GdN

2006-06-26

arxiv.org/abs/cond-mat/0606653v1

J. Phys.:Condens. Matter 18 (2006) 7337-7348

Physics

Condensed Matter

Strongly Correlated Electrons

13 pages, 8 figures, accepted for publication in Journal of Physics: Condensed Matter

Scientific paper

10.1088/0953-8984/18/31/026

We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse photoemission spectroscopy (ARIPS) of the conduction bands of GdN. A redshift of 0.34 eV of the lower band edge (T=$T_{c}$ $\to$ T=0) is obtained and found in close comparison with earlier theoretical prediction and experimental value reported in the literature.

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