Self Consistent NEGF-LLG Model for Spin-Torque Based Devices

Details Self Consistent NEGF-LLG Model for Spin-Torque Based Devices Self Consistent NEGF-LLG Model for Spin-Torque Based Devices

2006-06-26

arxiv.org/abs/cond-mat/0606648v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We present here a self consistent solution of quantum transport, using the Non Equilibrium Green's Function (NEGF) method, and magnetization dynamics, using the Landau-Lifshitz-Gilbert (LLG) formulation. We have applied this model to study current induced magnetic switching due to `spin torque' in a device where the electronic transport is ballistic and the free magnetic layer is sandwiched between two anti-parallel ferromagnetic contacts. The device shows clear hysteretic current-voltage characteristics, at room temperature, with a sharp transition between the bistable states and hence can be used as a non-volatile memory. We show that the proposed design may allow reducing the switching current by an order of magnitude.

Affiliated with

Also associated with

No associations

Rating

Self Consistent NEGF-LLG Model for Spin-Torque Based Devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Self Consistent NEGF-LLG Model for Spin-Torque Based Devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self Consistent NEGF-LLG Model for Spin-Torque Based Devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-400053