Cotunneling at resonance for the single-electron transistor

Details Cotunneling at resonance for the single-electron transistor Cotunneling at resonance for the single-electron transistor

1997-02-21

arxiv.org/abs/cond-mat/9702196v1

Phys. Rev. Lett. 78, 4482 (1997)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, Revtex, 5 eps-figures

Scientific paper

10.1103/PhysRevLett.78.4482

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.

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