Electronic transport in graphene: A semi-classical approach including midgap states

Details Electronic transport in graphene: A semi-classical approach including midgap states Electronic transport in graphene: A semi-classical approach including midgap states

2007-07-20

arxiv.org/abs/0707.3004v2

Phys. Rev. B 76, 205423 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

10.1103/PhysRevB.76.205423

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states which leads to a similar k-dependence of the relaxation time as charged impurities. The new scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.

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