Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles

Details Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles

2002-07-19

arxiv.org/abs/cond-mat/0207492v1

Physics

Condensed Matter

Materials Science

2 figures; submitted to Journal of Superconductivity: Incorporating Novel Magnetism

Scientific paper

We calculate the current spin polarisation and the interface resistance of
Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles,
including also the possibility of a Schottky barrier. From our results of
interface resistance we estimate the barrier thickness needed for efficient
spin injection if the process is non-ballistic.

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