Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

Details Effects of charged defects on the electronic and optical properties of self-assembled quantum dots Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

2012-03-07

arxiv.org/abs/1203.1423v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to PRB

Scientific paper

We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected, while significant changes are observed for strain-free quantum dots.

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