Strong Electron Tunneling through Mesoscopic Metallic Grains

Details Strong Electron Tunneling through Mesoscopic Metallic Grains Strong Electron Tunneling through Mesoscopic Metallic Grains

1997-02-11

arxiv.org/abs/cond-mat/9702101v1

Phys. Rev. B 56, 15782 (1997)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

22 pages, Revtex, 7 eps-figures

Scientific paper

10.1103/PhysRevB.56.15782

We describe electron transport through small metallic grains with Coulomb blockade effects beyond the perturbative regime. For this purpose we study the real-time evolution of the reduced density matrix of the system. In the first part of the paper we present a diagrammatic expansion for not too high junction conductance, $h/4\pi^2e^2 R_t \lesssim 1$, in a basis of charge states. Quantum fluctuations renormalize system parameters and lead to finite lifetime broadening in the gate-voltage dependent differential conductance. We derive analytic results for the spectral density and the conductance in the limit where only two charge states play a role. In the second part of the paper we consider junctions with large conductance, $h/4e^2 R_t \gtrsim 1$. In this case contributions from all charge states, which broaden and overlap, become important. We analyze the problem in a quasiclassical approximation. The two complementary approaches cover the essential features of electron tunneling for all parameters.

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